DASHSemiconductor
DBC · AMB · Ceramic substrates

Copper-bonded ceramic substrates for power modules

Al₂O₃, ZTA, AlN and Si₃N₄ substrates for IGBT and SiC modules, supplied from qualified Chinese manufacturers with engineering support in English.

Send a drawing and we reply with a DFM review and a quotation within two working days.

SiC die Cu 0.30 Si₃N₄ 0.32 Cu 0.30 Active metal braze (Ag–Cu–Ti) Etched gap ≥ 0.5 mm dimensions in mm · not to scale
Typical Si₃N₄ AMB stack for a 1200 V SiC half-bridge.
DBC

Direct Bonded Copper

Copper foil is bonded to the ceramic through a Cu–O eutectic at about 1065 °C. No filler layer, low cost, mature process. Used mainly with Al₂O₃ and ZTA.

  • Copper typically 0.127 – 0.60 mm
  • Best cost per cm² for industrial and consumer modules
  • Moderate thermal-cycling life
AMB

Active Metal Brazing

Copper is brazed to the ceramic with an Ag–Cu–Ti filler under vacuum. The titanium reacts with the ceramic to form a strong bond, which makes nitride ceramics practical.

  • Thick copper up to 0.80 mm for high current
  • Used with Si₃N₄ and AlN
  • Standard choice for EV traction SiC modules
Applications

Where our substrates go

EV traction inverters

Si₃N₄ AMB under SiC MOSFETs, built for long power-cycling life.

Solar and storage

Al₂O₃ and ZTA DBC for string inverters and PCS modules.

Industrial drives

Standard IGBT modules from 600 V to 1700 V.

Rail and grid

AlN and Si₃N₄ for high-voltage, high-heat-flux designs.

How ordering works

From drawing to production

  1. Send your drawing

    DXF, DWG, PDF or Gerber with ceramic, copper thickness and finish.

  2. DFM review

    We check gaps, edge margins and copper balance, and quote within two working days.

  3. Samples

    Engineering samples with inspection data, typically in 3 – 5 weeks.

  4. Production

    Volume supply with lot traceability and incoming-inspection reports.

Have a substrate drawing?

Send it to sales@dashsemi.com or use the quote form.

Request a quote