Fast does not mean fragile. Here is what our substrates are tested to.
≥ 5000cycles
Thermal shock, Si₃N₄ AMB
−65 ↔ +150 °C
≤ 1 %
Bond void ratio
SAT, 50 MHz
≥ 10N/mm
Copper peel strength
18 N/mm typical
≤ 0.5 %
Warpage
over diagonal
Tested on standard builds. Results for your own layout can be provided with the first samples.
| Test | Specification | Condition / typical | Method |
|---|---|---|---|
| Copper peel strength | ≥ 10 N/mm | 18 N/mm typical | IPC-TM-650 2.4.8, 50 mm/min, 0.3 mm Cu |
| Bond void ratio (AMB) | ≤ 1 % | Scanned on every lot | SAT, 50 MHz probe, 100 µm/pixel |
| Thermal shock, Si₃N₄ AMB | ≥ 5000 cycles | 0.3 Cu / 0.32 Si₃N₄ / 0.3 Cu | −65 °C ↔ +150 °C, 15 min dwell, < 15 s transfer |
| Thermal shock, AlN AMB | ≥ 800 cycles | 0.3 Cu / 1.0 AlN / 0.3 Cu | −65 °C ↔ +150 °C, 15 min dwell, < 15 s transfer |
| Warpage | ≤ 0.5 % | Measured by laser profilometry | Flatness over diagonal length |
| Solderability | ≥ 95 % wetting | SnSb5 preform, formic atmosphere | J-STD-003, Test A1 |
| Al wire bond shear | ≥ 1000 gf | ≥ 50 % Al residue | 300 µm (15 mil) Al wire |
| Ag-sintered die shear | ≥ 30 MPa | Die ≥ 3 × 3 mm | T/CASA 018-2021 |
Si₃N₄ has roughly twice the fracture toughness of Al₂O₃ and AlN, so cracks from copper stress do not propagate.
An active-metal braze layer bonds copper chemically to the ceramic and holds up to thicker copper than direct bonding.
Up to 1.2 mm copper spreads heat laterally and carries more current, without sacrificing cycling life.
Outline, copper thickness and critical gaps measured per lot.
Scratches, pits, discoloration and copper residue in gaps.
Bond-void check on AMB lots. Images available on request.
Material, thickness and finish confirmed per shipment.
Declarations available for all standard materials.
Panel and lot numbers on every carton.